Our CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both lowest losses in the application and highest reliability in operation. The discrete CoolSiC™ portfolio in TO- and SMD-housings comes in 650 V, 1200 V and 1700 V voltages classes, with on-resistance ratings from 27 mΩ up to 1000 mΩ. CoolSiC™ trench technology enables a flexible parameter-set, which is used for implementation of application-specific features in respective product portfolios, e.g.: gate-source voltages, avalanche specification, short-circuit capability or internal body diode rated for hard commutation.
CoolSiC™ MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low dynamic loss, even at zero volt turn-off voltage in bridge topologies. Wps office download gratis. Our TO- and SMD offering comes also with Kelvin-source pins for optimized switching performance.
4H-Silicon Carbide MOSFET. Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of. Silicon carbide MOSFETs have a critical breakdown strength that is 10x of silicon, and silicon carbide MOSFETs can operate at much higher temperatures, provide higher current density, experience reduced switching losses, and support higher switching frequencies. This also means that silicon carbide MOSFETs are more similar to silicon IGBTs,.
We complete the SiC discrete offering with a range of selected driver IC products fulfilling the needs of the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: improved efficiency, space and weight savings, part count reduction, enhanced system reliability.
Silicon Carbide (SiC) MOSFET
Silicon Carbide (SiC) MOSFET to become the de-facto standard for EVs and HEVs applications. Bright TOWARD Industrial Co., Ltd. announced TO247 SiC Poer MOSFET from 650V/110A to 1700V/3.4A, TO220 SiC Power MOSFET from 650V/12A to 52A models. Print from evernote. These products significantly reduce turn-off losses compare with conventional IGBTs. As a result, these solve design engineers’ difficult tasks to achieve high power capability and low conductive losses. Noticeably Bright TOWARD extends their SiC technology to well-known Relay products line, 50 Series SiC MOSFET relay (650V/300mA), 51 Series SiC MOSFET relay (1200V/250mA), 52 Series SiC MOSFET relay (1700V/350mA), and 53 Series SiC MOSFET relay (3300V/300mA). These products achieve both high load voltage with high load current and low and stable On-Resistance.
The linear model describes the behavior of a MOSFET biased with a small drain-to-source voltage. As the name suggests, the linear model, describes the MOSFET acting as a linear device. More specifically, it can be modeled as a linear resistor whose resistance is modulated by the gate-to-source voltage. RJK03B7DPA Silicon N Channel Power MOS FET Power Switching ATTACH.
SiC MOSFET is able to gain lower ON-Resistance and higher voltage with the same chip size of conventional Si MOSFET. SiC MOSFETs generate no tail current and reduce a turn-off loss for replacement of Si-IGBT. By these superior characteristics, these products are suitable for applications in Energy Storage System (ESS) and Battery Management Systems (BMS).
Opto SiC MOSFET Relay Products
Opto Silicon Carbide (SiC) MOSFET relays.
SiC MOSFET Products
N-Channel Enhancement Mode
Silicon Mosfet Transistor
Part Number | VDS (V) | IDS @25C (A) | RDSon (mOhms) | Package | Datasheet |
---|---|---|---|---|---|
TSC065F020 | 650 | 110 | 20 | TO247 | |
TSC065F050 | 650 | 52 | 50 | TO247 | |
TSC065F100 | 650 | 25 | 100 | TO247 | |
TSC065F200 | 650 | 12 | 200 | TO247 | |
TSC120F030 | 1200 | 80 | 30 | TO247 | |
TSC120F060 | 1200 | 41 | 60 | TO247 | |
TSC120F120 | 1200 | 20 | 120 | TO247 | |
TSC120F240 | 1200 | 10 | 240 | TO247 | |
TSC170F045 | 1700 | 58 | 45 | TO247 | |
TSC170F1K0 | 1700 | 3.4 | 1000 | TO247 | |
TSC065B050 | 650 | 52 | 50 | TO220 | |
TSC065B100 | 650 | 25 | 100 | TO220 | ASK |
TSC065B200 | 650 | 12 | 200 | TO220 | ASK |